| 摘要 |
In at least one embodiment of the semiconductor light source (1), the latter comprises at least two planar elements (2). The planar elements (2) each contain a semiconductor material for producing ultraviolet or visible radiation (R) when the semiconductor light source (1) is in operation. The radiation (R) is in this case emitted at precisely one major face (3) of the planar elements (2). The reflectivity of the planar elements (2) for visible radiation, when the semiconductor light source (1) is not in operation, amounts to at least 80%. The planar elements (2) furthermore exhibit an average diameter (L) of at least 10 mm. Furthermore the major faces (3) of the planar elements (2) are arranged at an angle (α) to one another and facing one another. The angle (α) between the major faces (3) amounts in this case to between 30° and 120° inclusive. |
