SEMICONDUCTOR MEMORY WITH IMPROVED MEMORY BLOCK SWITCHING,申请号EP20100744637-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY WITH IMPROVED MEMORY BLOCK SWITCHING
摘要
申请公布号	EP2465116(A1)	申请公布日期	2012.06.20
申请号	EP20100744637	申请日期	2010.08.06
申请人	SANDISK 3D LLC	发明人	YAN, THOMAS;FASOLI, LUCA;SCHEUERLEIN, ROY, E.
分类号	G11C5/14;G11C7/12;G11C13/00;G11C16/02;G11C16/24;G11C17/06;G11C17/18	主分类号	G11C5/14
代理机构		代理人
主权项
地址

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