发明名称 FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.</p>
申请公布号 KR101157660(B1) 申请公布日期 2012.06.20
申请号 KR20040087328 申请日期 2004.10.29
申请人 发明人
分类号 G01R1/06;H01L21/66;G01R1/067;G01R1/073;G01R3/00;G01R31/28;H01L21/822;H01L27/04 主分类号 G01R1/06
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