| 摘要 |
PURPOSE: A vertical led device and a manufacturing method thereof are provided to prevent an LED device from being damaged by forming a p-type electrode on a p-GaN layer excluding an ODR(Omni-Directional Reflective) layer. CONSTITUTION: A light emitting structure(120) includes an n-GaN layer, an active layer, and a p-GaN layer which are successively laminated. An ODR(Omni-Directional Reflective) layer(130) is formed to have a constant pattern on the p-GaN layer. A p-type electrode(140) is formed on the p-GaN layer excluding the ODR layer. The p-type electrode has the same thickness as the ODR layer. An n-type electrode(150) is formed on the n-GaN layer of the light emitting structure. |
