发明名称 |
Nonvolatile memory devices having a three dimensional structure |
摘要 |
Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays. |
申请公布号 |
US8203211(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20100798525 |
申请日期 |
2010.04.06 |
申请人 |
JEONG JAEHUN;KIM HANSOO;JANG JAEHOON;CHO HOOSUNG;KIM KYOUNG-HOON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JAEHUN;KIM HANSOO;JANG JAEHOON;CHO HOOSUNG;KIM KYOUNG-HOON |
分类号 |
H01L27/115;H01L23/522 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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