摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce ESC pitches by making a bump material reflowing without a solder mask. CONSTITUTION: A solder mask patch is formed between a die bump pad and an interconnection site. A conductive bump material is electrodeposited on the interconnection site or the die bump pad. A semiconductor die(74) is mounted on a substrate. The conductive bump material re-flows around the die bump pad or the interconnection site without a solder mask. An encapsulating material(84) is electrodeposited between the semiconductor die and the substrate. |