发明名称 METHOD OF MANUFACTURING TITANIUM-CONTAINING SPUTTERING TARGET
摘要 A method of manufacturing a titanium-containing sputtering target is disclosed, with the method being capable of reducing the frequency of occurrence of abnormal discharge caused by lattice defects. A first metal powder containing a high melting point metal and a second metal powder containing titanium are manufactured. Subsequently, a mixed powder of the first metal powder and the second metal powder is sintered at a temperature of 695� C. or higher, and then heat-treated at a temperature of 685� C. or lower. After the sintering, the sintered body is heat-treated at a temperature of 685� C. or lower, thereby decreasing plate-like structures (lattice defects) in a sintered phase. Accordingly, it is possible to obtain a titanium-containing sputtering target with which abnormal discharge occurs less frequently.
申请公布号 KR20120064723(A) 申请公布日期 2012.06.19
申请号 KR20127011776 申请日期 2010.10.22
申请人 ULVAC, INC. 发明人 TAKAHASHI KAZUTOSHI;NITTA JUNICHI
分类号 C23C14/34;B22F1/00;B22F9/08;H01L21/28 主分类号 C23C14/34
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