| 摘要 |
Gas atmosphere, which is of a laser irradiation section and is to be applied to a body to be processed, is excellently formed in a laser processing apparatus. The laser processing apparatus performs process to the body to be processed (amorphous semiconductor film (2)) by irradiating the body with a laser beam (6). The laser processing apparatus is provided with a gas injection means which injects a gas for forming irradiation atmosphere to the vicinity of the laser beam irradiation portion. The injection means is provided with an introducing section (gas supply pipe (12)) of the gas; a gas injection port (15) from which the gas is injected toward the body to be processed; and a gas channel (13) arranged from the gas introducing section to the gas injection port. The gas channel has a flow uniformizing surface, which makes a gas flow uniform in a direction intersecting with the flow direction of the gas by facing the gas flow direction to disturb the gas flow. Thus, uniform irradiation atmosphere can be formed in the vicinity of the laser beam irradiation portion of the body to be processed, and uniform and high quality process by laser beam irradiation can be performed. |
