发明名称 System and method for reducing process-induced charging
摘要 A semiconductor device includes a substrate, a memory cell formed on the substrate, and a contact to the substrate. The contact is formed in an area away from the memory cell and functions to raise the potential of the substrate.
申请公布号 US8203178(B2) 申请公布日期 2012.06.19
申请号 US20100860074 申请日期 2010.08.20
申请人 MARTIROSIAN ASHOT MELIK;LIU ZHIZHENG;RANDOLPH MARK;SPANSION LLC 发明人 MARTIROSIAN ASHOT MELIK;LIU ZHIZHENG;RANDOLPH MARK
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
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