发明名称 |
System and method for reducing process-induced charging |
摘要 |
A semiconductor device includes a substrate, a memory cell formed on the substrate, and a contact to the substrate. The contact is formed in an area away from the memory cell and functions to raise the potential of the substrate. |
申请公布号 |
US8203178(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20100860074 |
申请日期 |
2010.08.20 |
申请人 |
MARTIROSIAN ASHOT MELIK;LIU ZHIZHENG;RANDOLPH MARK;SPANSION LLC |
发明人 |
MARTIROSIAN ASHOT MELIK;LIU ZHIZHENG;RANDOLPH MARK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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