发明名称 |
Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same |
摘要 |
Memory cells of a memory device including a variable resistance material have a cavity between the memory cells. Electronic systems include such memory devices. Methods of forming a memory device include providing a cavity between memory cells of the memory device.
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申请公布号 |
US8203134(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20090563277 |
申请日期 |
2009.09.21 |
申请人 |
LIU JUN;MICRON TECHNOLOGY, INC. |
发明人 |
LIU JUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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