发明名称 |
Method for manufacturing an organic semiconductor element |
摘要 |
In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.
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申请公布号 |
US8202760(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US201113153515 |
申请日期 |
2011.06.06 |
申请人 |
HIRAKATA YOSHIHARU;ISHITANI TETSUJI;FUKAI SHUJI;IMAHAYASHI RYOTA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HIRAKATA YOSHIHARU;ISHITANI TETSUJI;FUKAI SHUJI;IMAHAYASHI RYOTA |
分类号 |
H01L51/40;G02F1/1368;H01L51/00;H01L51/30 |
主分类号 |
H01L51/40 |
代理机构 |
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主权项 |
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地址 |
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