Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus

摘要

A semiconductor device manufacturing method includes: forming a layer on a heated substrate by supplying source gas into a process vessel; changing the layer into an oxide layer by supplying gases containing oxygen and hydrogen to the heated substrate in the process vessel under a pressure lower than atmospheric pressure; and forming an oxide film on the heated substrate by alternately repeating the forming of the layer and the changing of the layer while purging an inside of the process vessel therebetween. In the forming of the layer, the source gas is supplied toward the substrate through a nozzle at a side of the substrate, and inert or hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate, such that the velocity of the source gas flowing parallel to the substrate is greater than the velocity of the inert gas flowing parallel to the substrate in the purging of the process vessel.