| 发明名称 |
Methods of manufacturing metal-silicide features |
| 摘要 |
A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed. |
| 申请公布号 |
US8202799(B2) |
申请公布日期 |
2012.06.19 |
| 申请号 |
US20100833595 |
申请日期 |
2010.07.09 |
| 申请人 |
LIN CHEN-TUNG;CHANG CHIH-WEI;WU CHII-MING;WANG MEI-YUN;CHUANG CHAING-MING;SHUE SHAU-LIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHEN-TUNG;CHANG CHIH-WEI;WU CHII-MING;WANG MEI-YUN;CHUANG CHAING-MING;SHUE SHAU-LIN |
| 分类号 |
H01L21/44;C30B1/00;H01L21/20;H01L21/28;H01L21/285;H01L21/321;H01L21/336;H01L21/36;H01L21/461;H01L21/4763;H01L21/768;H01L23/485;H01L29/06 |
主分类号 |
H01L21/44 |
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