发明名称 |
Improvements for reducing electromigration effect in an integrated circuit |
摘要 |
An integrated circuit comprising one or more dielectric layers the or each dielectric layer being provided with one or more interconnects wherein the interconnect comprises metallic atoms moving from a first region of the interconnect to a second region of the interconnect when a current flows, characterized in that the interconnect comprises a donor zone in the first region of the interconnect for providing metallic atoms in order to compensate for movement of atoms from the first region and a receptor zone at the second region of the interconnect for receiving metallic atoms in order to compensate for movement of atoms to the second region. |
申请公布号 |
US8202798(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20100675242 |
申请日期 |
2010.02.25 |
申请人 |
BRAECKELMANN GREG;KAWASAKI HISAO;ORLOWSKI MARIUS;PETITPREZ EMMANUEL;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
BRAECKELMANN GREG;KAWASAKI HISAO;ORLOWSKI MARIUS;PETITPREZ EMMANUEL |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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