发明名称 |
Method for fabricating GaNAsSb semiconductor |
摘要 |
Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed by annealing at an annealing temperature for an annealing time; wherein at least one of: the fabrication temperature, annealing temperature and annealing time, is controlled for controlling defect formation in the semiconductor so as to achieve predetermined performance characteristics of the semiconductor. |
申请公布号 |
US8202788(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20080936495 |
申请日期 |
2008.06.26 |
申请人 |
YOON SOON FATT;TAN KIAN HUA;LOKE WAN KHAI;WICAKSONO SATRIO;NG TIEN KHEE;NANYANG TECHNOLOGICAL UNIVERSITY |
发明人 |
YOON SOON FATT;TAN KIAN HUA;LOKE WAN KHAI;WICAKSONO SATRIO;NG TIEN KHEE |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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