发明名称 |
Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device |
摘要 |
A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.
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申请公布号 |
US8202752(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20090488875 |
申请日期 |
2009.06.22 |
申请人 |
HUANG SHIH CHENG;TU PO MIN;YEH YING CHAO;LIN WEN YU;WU PENG YI;CHAN SHIH HSIUNG;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
HUANG SHIH CHENG;TU PO MIN;YEH YING CHAO;LIN WEN YU;WU PENG YI;CHAN SHIH HSIUNG |
分类号 |
H01L21/00;H01L21/205;H01L21/338;H01L33/12;H01L33/32;H01S5/323 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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