发明名称 |
Method of manufacturing semiconductor devices and semiconductor manufacturing apparatus |
摘要 |
In a method of manufacturing a semiconductor device with plasma generated in a process chamber by impressing radio-frequency power, a level of a radio-frequency power for each step is switched over in response to processing in each step upon applying a plurality of processing steps to a semiconductor substrate while holding the semiconductor substrate, and thereby the plurality of steps are carried out successively. |
申请公布号 |
US8202394(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20020166303 |
申请日期 |
2002.06.11 |
申请人 |
MORIYA TSUYOSHI;ITO NATSUKO;UESUGI FUMIHIKO;RENESAS ELECTRONICS CORPORATION |
发明人 |
MORIYA TSUYOSHI;ITO NATSUKO;UESUGI FUMIHIKO |
分类号 |
H01L21/3065;H01L21/302;H01L21/311;H01L21/3213;H01L21/461 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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