CHLORINE DOPPED ZINC TIN OXIDE THIN FILM TRANSISTOR AND THE MANUFACTURING METHOD

摘要

PURPOSE: A zinc tin oxide thin film transistor doped with chlorine and a manufacturing method thereof are provided to reduce the movement of a threshold voltage by forming an active layer doped with a halogen group element in a printing method. CONSTITUTION: A gate electrode is formed on a substrate. A gate insulating layer is formed on the gate electrode. An active layer of a zinc tin oxide doped with chlorine is formed on the gate insulating layer. A source electrode and a drain electrode are formed on the active layer. The active layer is formed by a printing method.