EPITAXIAL SUBSTRATE FOR BACK ILLUMINATED SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An epitaxial substrate for a back illuminated type solid-state imaging device and a manufacturing method thereof are provided to control diffusion of a p-type impurity by forming the peak concentration of the p-type impurity of a first epitaxial layer to be 2.7×1017atoms/cm^3 to 1.1×1019atoms/cm^3. CONSTITUTION: The resistivity of a p-type silicon board(1) is less than 100Ωcm. Carbon and nitrogen are added to the p-type silicon board. A first epitaxial layer(2) is formed on the p-type silicon board. A second epitaxial layer(3) is formed on the first epitaxial layer. The peak concentration of the p-type impurity on the first epitaxial layer is 2.7×1017atoms/cm^3 to 1.1×1019atoms/cm^3.