| 摘要 |
An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes a first heavily doped region to represent a source region. A second heavily doped region represents a drain region of the semiconductor device. A third heavily doped region represents a gate region of the semiconductor device. The semiconductor device includes a gate oxide positioned between the source region and the drain region, below the gate region. The semiconductor device uses a split gate oxide architecture to form the gate oxide. The gate oxide includes a first gate oxide having a first thickness and a second gate oxide having a second thickness. |
