发明名称 |
Non-volatile memory and operation method thereof |
摘要 |
An operation method of a non-volatile memory suitable for a multi-level cell having a first storage position and a second storage position is provided. The operation method includes: setting a main voltage distribution group and a plurality of secondary voltage distribution groups, wherein each of the main voltage distribution group and the secondary voltage distribution groups includes N threshold-voltage distribution curves, and N is an integer greater than 2; selecting a first operation level and a second operation level according to a programming command; programming the first storage position according to the threshold-voltage distribution curve corresponding to the first operation level in the main voltage distribution group; selecting one of the secondary voltage distribution groups according to the first operation level and programming the second storage position according to the threshold-voltage distribution curve corresponding to the second operation level in the selected secondary voltage distribution group. |
申请公布号 |
US8203879(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20100834233 |
申请日期 |
2010.07.12 |
申请人 |
CHANG YAO-WEN;LU TAO-CHENG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG YAO-WEN;LU TAO-CHENG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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