发明名称 Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
摘要 A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.
申请公布号 US8203377(B2) 申请公布日期 2012.06.19
申请号 US20100777961 申请日期 2010.05.11
申请人 KELLEY ROBIN LYNN;REES FENTON;SS SC IP, LLC 发明人 KELLEY ROBIN LYNN;REES FENTON
分类号 H03K17/687 主分类号 H03K17/687
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