| 摘要 |
<p>PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to form a hard mask film pattern having uniform micro-pattern interval by forming the fine pattern exceeding limit resolution of exposure equipment. CONSTITUTION: A first hard mask film is formed on a substrate in which an etched layer(21) is formed. The first hard mask film is formed into a laminating structure of an amorphous carbon film(22) and silicon oxy-nitride film(23). A sacrificing layer is formed on the first hard mask film. A first antireflection film is formed on the sacrificing layer. A sensitive film material is spread on the first antireflection film. A sensitive film pattern is patterned by patterning the sensitive film material through exposing and developing process. A first spacer is formed in both sidewalls of the first antireflection film and the sensitive film pattern.</p> |
