FABRICATING METHOD OF SEMICONDUCTOR DEVICE FOR REUSE OF SUBSTRATE

摘要

PURPOSE: A method for manufacturing a semiconductor device for substrate reuse is provided to improve productivity of the semiconductor device by securing two thin film structures with one separation process. CONSTITUTION: A first device layer(320) is formed at one side of a substrate(300). The first device layer comprises a transparent electrode layer and a p-type electrode. A second device layer(340) is formed at the other side of the substrate. A first carrier substrate(360) is welded to the first device layer. A second carrier substrate(380) is welded to the second device layer. The first device layer and the substrate are separated and the second device layer and the second device layer are separated through a laser lift off method.