| 摘要 |
PURPOSE: A nonvolatile memory device is provided to generate a stable global reference current by adding a write verification circuit of a reference cell to a magnetic memory using the reference cell. CONSTITUTION: A cell array reads or writes data in a unit cell according to the change of a resistance value. A sense amplifier(640) senses data by comparing currents flowing in the unit cell with a global reference current. A global reference current generating circuit(670) differently controls the level of the global reference current according to the position of the unit cell which is accessed. A write driver(660) writes the data in the unit cell. A column selection circuit selects the column line of the cell array.
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