NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A nitride type semiconductor device and a manufacturing method thereof are provided to maintain distance between a source electrode and a drain electrode by forming an ohmic junction by using second ohmic metal of an aluminum group and improving surface roughness of the ohmic junction. CONSTITUTION: Nitride system epi layers(20-40) are formed on a base substrate(10). A source electrode(61) is formed on the nitride system epi layers. A drain electrode(63) separated from the source electrode is formed on the nitride system epi layers. The source electrode and the drain electrode comprise a first ohmic junction(55) and a second ohmic junction(59). The second ohmic junction covers a part of the first ohmic junction. A gate electrode is formed between the source electrode and the drain electrode.