发明名称 |
RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN |
摘要 |
<p>PURPOSE: A resist composition and a method for forming resist patterns are provided to improve the lithography characteristic and the shape of the resist patterns by including nitrogen-containing organic compound components. CONSTITUTION: A resist composition includes a base material, a nitrogen-containing organic compound, and an acid generating agent. The acid generating agent generates acid by acid. The dissolution of the base material to a developing solution is charged by the action of acid. The nitrogen-containing organic compound includes a compound represented by chemical formula 1. The acid generating agent excludes the compound represented by chemical formula 1. In chemical formula 1, R1 is C5 or more alicyclic group with/without a substituted group; X is a divalent coupling group; Y is linear, branched, or cyclic alkylene group or arylene group; Rf is a hydrocarbon group containing fluorine atom; M^+ is an organic cation.</p> |
申请公布号 |
KR20120064033(A) |
申请公布日期 |
2012.06.18 |
申请号 |
KR20110129673 |
申请日期 |
2011.12.06 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
UTSUMI YOSHIYUKI;TAKESHITA MASARU;SHIMIZU HIROAKI;ABE SYO;KOMURO YOSHITAKA |
分类号 |
G03F7/004;G03F7/00;G03F7/039 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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