发明名称 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
摘要 <p>PURPOSE: A resist composition and a method for forming resist patterns are provided to improve the lithography characteristic and the shape of the resist patterns by including nitrogen-containing organic compound components. CONSTITUTION: A resist composition includes a base material, a nitrogen-containing organic compound, and an acid generating agent. The acid generating agent generates acid by acid. The dissolution of the base material to a developing solution is charged by the action of acid. The nitrogen-containing organic compound includes a compound represented by chemical formula 1. The acid generating agent excludes the compound represented by chemical formula 1. In chemical formula 1, R1 is C5 or more alicyclic group with/without a substituted group; X is a divalent coupling group; Y is linear, branched, or cyclic alkylene group or arylene group; Rf is a hydrocarbon group containing fluorine atom; M^+ is an organic cation.</p>
申请公布号 KR20120064033(A) 申请公布日期 2012.06.18
申请号 KR20110129673 申请日期 2011.12.06
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 UTSUMI YOSHIYUKI;TAKESHITA MASARU;SHIMIZU HIROAKI;ABE SYO;KOMURO YOSHITAKA
分类号 G03F7/004;G03F7/00;G03F7/039 主分类号 G03F7/004
代理机构 代理人
主权项
地址