PROGRAMMING METHOD OF NONVOLATILE MEMORY DEVICE AND THE NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for programming a nonvolatile memory device and the nonvolatile memory device are provided to minimize program time by simultaneously programming a plurality of memory cells connected to one input and output circuit. CONSTITUTION: A simultaneous write current is generated to simultaneously program bit line write cells corresponding to memory cells connected to the same bit line among memory cells based on a program address(S100). The simultaneous write current is provided by simultaneously activating the bit line write cells(S200). The bit line write cells which are programmed with the simultaneous write current are successively verified(S300).