| 摘要 |
<p>A PREPREG (10) WHICH CAN MEET A DEMAND FOR THICKNESS REDUCTION IS PROVIDED. THE PREPREG HAS FIRST AND SECOND RESIN (2,3) LAYERS HAVING DIFFERENT APPLICATIONS, FUNCTIONS, CAPABILITIES, OR PROPERTIES, OR ALLOWS AN AMOUNT OF A RESIN COMPOSITION IN EACH OF THE FIRST AND SECOND RESIN LAYERS TO BE SET APPROPRIATELY DEPENDING ON A CIRCUIT WIRING PORTION TO BE EMBEDDED INTO THE SECOND RESIN LAYER. FURTHER, A METHOD FOR MANUFACTURING THE ABOVE PREPREG (10), AND A SUBSTRATE (100) AND A SEMICONDUCTOR DEVICE (200) HAVING THE PREPREG ARE ALSO PROVIDED. THE PREPREG ACCORDING TO THE PRESENT INVENTION INCLUDES A CORE LAYER INCLUDING A SHEET-SHAPED BASE MEMBER AND HAVING ONE SURFACE AND THE OTHER SURFACE WHICH IS OPPOSITE TO THE ONE SURFACE, THE FIRST RESIN LAYER PROVIDED ON THE ONE SURFACE OF THE CORE LAYER AND FORMED OF A FIRST RESIN COMPOSITION, AND THE SECOND RESIN LAYER PROVIDED ON THE OTHER SURFACE OF THE CORE LAYER AND FORMED OF A SECOND RESIN COMPOSITION, WHEREIN AT LEAST ONE OF A REQUIREMENT THAT A THICKNESS OF THE FIRST RESIN LAYER IS DIFFERENT FROM THAT OF THE SECOND RESIN LAYER AND A REQUIREMENT THAT A CONSTITUTION OF THE FIRST RESIN COMPOSITION IS DIFFERENT FROM THAT OF THE SECOND RESIN COMPOSITION IS SATISFIED.</p> |
