| 摘要 |
The present invention relates to a method for preparing Cu(In,Ga)Se2 (hereinafter referred to as "CIGS") which is an absorption layer material of a CIGS compound thin film solar cell, wherein a minimum amount of selenium (Se) is uniformly supplied when a CuInGa metal precursor is selenized. The present invention provides a method for preparing a copper-indium-gallium-selenium (CIGS) thin film-coated substrate, comprising the following steps: preparing a precursor substrate in which a metal precursor comprising copper, indium and gallium is coated on a first substrate; preparing a selenium-coated substrate in which selenium is coated on a second substrate; facing one surface of the metal precursor of the precursor substrate to one surface of selenium of the selenium-coated substrate and closely adhering the same; and heating the closely adhered precursor substrate and selenium-coated substrate at a temperature at which selenium coated on the selenium-coated substrate can evaporate. |
