STORAGE NODE COMPRISING FREE MAGNETIC LAYER OF IN-PLANE MAGNETIC ANISOTROPY MATERIAL, MAGNETIC MEMORY DEVICE COMPRISING THE SAME AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A storage node including a free magnetic layer of a horizontal magnetic anisotropy material, a magnetic memory device including the same, and a manufacturing method thereof are provided to implement a high integrated nonvolatile magnetic memory device by controlling an aspect ratio of a free layer through the change of a three dimensional structure. CONSTITUTION: A pinning layer(50) is formed on a bottom magnetic layer(48). A pinned layer(52) with a fixed magnetization direction is formed on the pinning layer. A free layer(58) is formed on a tunnel barrier(56). The magnetization direction of the free layer is switched by a spin current. The free layer includes a horizontal magnetic anisotropic material layer.