发明名称 WAFER AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A wafer and a manufacturing method thereof are provided to prevent damage of the front surface of a silicon wafer by performing a polishing process after growing a seal layer on the front surface of the wafer. CONSTITUTION: Seal layers(30a,30b) are grown on a first side of a wafer(20). The seal layer is grown on a second side facing to the first side. The seal layer is eliminated by processing the seal layer on the first side with hydrofluoric acid(HF). The first side of the wafer in which the seal layer is eliminated is polished.
申请公布号 KR20120063082(A) 申请公布日期 2012.06.15
申请号 KR20100124114 申请日期 2010.12.07
申请人 LG SILTRON INCORPORATED 发明人 KIM, HYUN WOO;LEE, CHANG HUN;KIM, JAE SUN;SHIM, JUNG JIN
分类号 H01L21/20 主分类号 H01L21/20
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