发明名称 LOW POWER LATCH DEVICE USING THRESHOLD VOLTAGE SCALING OR USING A STACK STRUCTURE OF TRANSISTORS
摘要 PURPOSE: A low power latch device using threshold voltage scaling or a transistor having a stack structure are provided to prevent power leakage by adding an element operating in a relatively high threshold voltage. CONSTITUTION: A low power latch device(100) using threshold voltage scaling includes a low threshold voltage inverter unit(110), a high threshold voltage TR(Transmission/Reception) cut-out unit(120), a clocked inverter unit(130), and a feedback inverter unit(140). The low threshold voltage inverter is composed of an electric circuit element operating in a threshold voltage relatively lower than a normal threshold voltage. The cut-out unit is composed the element operating in a high critical voltage. The clocked inverter unit is composed of a pull-up element and a pull-down element. The feedback inverter unit acts in a corresponding active-level by receiving output values.
申请公布号 KR20120063176(A) 申请公布日期 2012.06.15
申请号 KR20100124247 申请日期 2010.12.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, MYEONG EUN
分类号 H03K3/037;H03K3/356 主分类号 H03K3/037
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