发明名称 DUAL DELIVERY CHAMBER DESIGN
摘要 A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
申请公布号 WO2012054200(A3) 申请公布日期 2012.06.14
申请号 WO2011US53744 申请日期 2011.09.28
申请人 APPLIED MATERIALS, INC.;IYENGAR, PRAHALLAD;BALUJA, SANJEEV;DUBOIS, DALE, R.;ROCHA-ALVAREZ, JUAN, CARLOS;NOWAK, THOMAS;HENDRICKSON, SCOTT, A.;LEE, YONG-WON;SHEK, MEI-YEE;XIA, LI-QUN;WITTY, DEREK, R. 发明人 IYENGAR, PRAHALLAD;BALUJA, SANJEEV;DUBOIS, DALE, R.;ROCHA-ALVAREZ, JUAN, CARLOS;NOWAK, THOMAS;HENDRICKSON, SCOTT, A.;LEE, YONG-WON;SHEK, MEI-YEE;XIA, LI-QUN;WITTY, DEREK, R.
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址