<p>A plasma (106) is formed from one or more gases in a plasma chamber (102) using at least power (203) and a second power (204). A first ion species (107) is generated at said first power and. a second ion species (108) is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece (105) at two different energies using a least a first bias voltage (205) and a second bias voltage (206). This may enable implantation to two different depths. These ion species may be atomic o molecular, ions. The molecular ions may be larger than the gases used to form the plasma.</p>
申请公布号
WO2012078339(A1)
申请公布日期
2012.06.14
申请号
WO2011US61462
申请日期
2011.11.18
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;RADOVANOV, SVETLANA;GODET, LUDOVIC;HATEM, CHRISTOPHER, R.
发明人
RADOVANOV, SVETLANA;GODET, LUDOVIC;HATEM, CHRISTOPHER, R.