| 摘要 |
<p>A semiconductor wafer (11) is irradiated with a charged particle beam (6) and scanned, secondary charged particles (9) obtained from the semiconductor wafer (11) by having the wafer irradiated with the charged particle beam (6) are detected, a detection image of an inspection area, said detection image having been obtained on the basis of scanning information and detection signals of the secondary charged particles (9), and a detection image of a reference area are compared with each other, and a defect candidate is detected by comparing the difference between the detection images and a threshold value with each other. Defect information, including the positional information of the defect candidate, is generated such that the information includes, the relative positions of predetermined feature points in the repeated patterns formed on the semiconductor wafer (11), with respect to the origins of the coordinate regions set to respective repeated patterns, and a relative position of the defect candidate with respect to the feature points. Consequently, a defect inspecting apparatus that can more easily specify a defective area at the time of cutting out the defective area by means of FIB is provided.</p> |
