| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and a programming method for a non-volatile memory cell of a multi-bit magnetic random access memory cell. <P>SOLUTION: A first magnetic tunnel junction (MTJ) 192 is adjacent to a second MTJ 192 having a magnetic filter 208. The first MTJ 192 is programmed to a first logical state with a first magnetic flux 212 while the magnetic filter 208 absorbs the first magnetic flux 212 to prevent the second MTJ 192 from being programmed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
