| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxynitride semiconductor with the carrier density controlled. <P>SOLUTION: By introduction of controlled nitrogen into an oxide semiconductor layer, a transistor including a channel with an oxynitride semiconductor having targeted carrier density and on characteristic can be fabricated. Further, by the use of the oxynitride semiconductor, the contact characteristic is excellent even without a low-resistance layer or the like provided between the oxynitride semiconductor layer, and a source electrode and a drain electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
