| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal increasing C solubility in a solution to improve a growth rate of the SiC single crystal, suppressing fluctuation in a solution composition due to consumption of an SiC component associated with the growth of the single crystal, and stabilizing conditions for single crystal growth. <P>SOLUTION: The method of producing an SiC single crystal includes: disposing an SiC seed crystal 20 at a bottom part inside a graphite crucible 10; causing a solution 30 containing Si, C and R (R is at least one selected from the rare earth elements inclusive of Sc and Y) to be present in the crucible 10; supercooling the solution 30 so as to cause the SiC single crystal to grow on the seed crystal 20; and adding powdery or granular Si and/or SiC raw material 41 to the solution 30 from above the graphite crucible 10 while keeping the growth of the SiC single crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
