MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nonvolatile semiconductor memory device capable of suppressing power consumption and reducing switch malfunctions using a carbon nanotube as a variable resistive element.

SOLUTION: A manufacturing method of a nonvolatile semiconductor memory device of an embodiment includes: a step of forming a lower electrode on a semiconductor substrate 9; a step of forming a variable resistance layer 11 containing a carbon nanotube on the lower electrode; an irradiation step of irradiating the variable resistance layer with an electron beam or a photon beam; and a step of forming an upper electrode on the variable resistance layer after the irradiation step.

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