| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent galvanic corrosion on the surface of a copper film due to exposure to water during conveyance of a wafer on which copper interconnections are formed after CMP polishing. <P>SOLUTION: Surface of a copper film 3 is changed to cuprous oxide (Cu<SB POS="POST">2</SB>O)5 insoluble to water by polishing the wafer surface by using a cleaning agent having pH adjusted to 7-12 immediately after a barrier metal film polishing process in the Cu-CMP process when copper interconnections are formed, and an antioxidation film 6 is formed by making an oxidation inhibitor adhere to the surface of Cu<SB POS="POST">2</SB>O5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
