| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device in which occurrence of flare is reduced without forming a flare prevention film, and measurement accuracy of offset due to optical black can be enhanced, and to provide a method for manufacturing the same. <P>SOLUTION: In a stack type solid state imaging device 100, a photoelectric conversion film 42 formed simultaneously in an effective pixel region 110 and a peripheral region 130 acts as a flare prevention film for reducing reflection on an interconnection 37 composed of a metal, in the peripheral region 130, by absorbing the light incident to the interconnection 37, and prevents electrons generated in the peripheral region 130 from entering an optical black region 120 by exposing the upper part of an interconnection 37b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
