PRODUCTION METHOD FOR A SEMICONDUCTOR ELEMENT

摘要

Provided is a production method for a semiconductor element comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor element comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.