发明名称 |
NITRIDE BASED SEMICONDUCTOR DEVICE |
摘要 |
Disclosed herein is a nitride based semiconductor device. There is provided a nitride based semiconductor device including a base substrate; a semiconductor layer disposed on the base substrate; and an electrode structure disposed on the semiconductor layer, wherein the electrode structure includes: a first ohmic electrode ohmic-contacting the semiconductor layer; a second ohmic electrode ohmic-contacting the semiconductor layer and spaced apart from the first ohmic electrode; and a schottky electrode unit schottky-contacting the semiconductor layer and covering the second ohmic electrode. |
申请公布号 |
US2012146051(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113049155 |
申请日期 |
2011.03.16 |
申请人 |
PARK YOUNGHWAN;PARK KIYEOL;JEON WOOCHUL;SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK YOUNGHWAN;PARK KIYEOL;JEON WOOCHUL |
分类号 |
H01L29/161;H01L29/778 |
主分类号 |
H01L29/161 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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