| 摘要 |
A semiconductor device includes an MIS transistor and an electric fuse. The MIS transistor includes a gate insulating film formed on the semiconductor substrate, and a gate electrode including a first polysilicon layer, a first silicide layer, and a first metal containing layer made of a metal or a conductive metallic compound. The electric fuse includes an insulating film formed on the semiconductor substrate, a second polysilicon layer formed over the insulating film, and a second silicide layer formed on the second polysilicon layer. |
