SILICON TARGET FOR SPUTTERING FILM FORMATION AND METHOD FOR FORMING SILICON-CONTAINING THIN FILM

摘要

PURPOSE: A silicon target for sputtering film formation and a method for forming a thin film containing silicon are provided to reduce charge up and oscillation of a silicon target during sputtering film formation by forming a conductive layer in the junction of an n-type Si target material. CONSTITUTION: A silicon target for sputtering film formation comprises a Si target material(10). The Si target material, including n-type conductive silicon, is welded to a metallic backing plate(20) via a bonding material. A conductive layer(30) is formed on the surface of the Si target material facing the bonding material. The conductive layer includes a material having a work function less than that of the Si target material.