发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which improves film quality without causing secondary problems. <P>SOLUTION: A substrate processing apparatus has a processing chamber housing multiple substrates, a substrate supporter supporting the substrates in a lamination manner, gas supply means supplying a process gas to the processing chamber, and a control part controlling the gas supply means. The gas supply means is formed by multiple gas supply holes opening between the multiple substrates and a nozzle having an ultraviolet light radiation part activating the process gas with ultraviolet light and erected in the processing chamber along the lamination direction of the substrates. The control part controls the gas supply means so as to supply the process gas to spaces between the multiple substrates with the ultraviolet light from the gas supply holes and excite the process gas. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012114350(A) 申请公布日期 2012.06.14
申请号 JP20100263791 申请日期 2010.11.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ASAI MASAYUKI
分类号 H01L21/31;C23C16/48;H01L21/205 主分类号 H01L21/31
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