发明名称 METHOD FOR MANUFACTURING GROUP III NITRIDE CRYSTAL, METHOD FOR MANUFACTURING GROUP III NITRIDE TEMPLATE, THE GROUP III NITRIDE CRYSTAL, AND THE GROUP III NITRIDE TEMPLATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal, a method for manufacturing a group III nitride template, and the group III nitride crystal and the group III nitride template, which can suppress damage in a reactor made of quartz. <P>SOLUTION: The group III nitride crystal contains carbon in an amount of &ge;1&times;10<SP POS="POST">16</SP>and <1&times;10<SP POS="POST">20</SP>cm<SP POS="POST">-3</SP>therein, wherein the carbon replaces group V site, and does not contain other impurities acting as an acceptor in the group III nitride crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012111677(A) 申请公布日期 2012.06.14
申请号 JP20110083404 申请日期 2011.04.05
申请人 HITACHI CABLE LTD 发明人 YOSHIDA TAKEHIRO;OSHIMA YUICHI;TSUCHIYA TADAYOSHI
分类号 C30B29/38;C23C16/34;C30B25/02;H01L21/205 主分类号 C30B29/38
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