发明名称 |
METHOD FOR MANUFACTURING GROUP III NITRIDE CRYSTAL, METHOD FOR MANUFACTURING GROUP III NITRIDE TEMPLATE, THE GROUP III NITRIDE CRYSTAL, AND THE GROUP III NITRIDE TEMPLATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal, a method for manufacturing a group III nitride template, and the group III nitride crystal and the group III nitride template, which can suppress damage in a reactor made of quartz. <P>SOLUTION: The group III nitride crystal contains carbon in an amount of ≥1×10<SP POS="POST">16</SP>and <1×10<SP POS="POST">20</SP>cm<SP POS="POST">-3</SP>therein, wherein the carbon replaces group V site, and does not contain other impurities acting as an acceptor in the group III nitride crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012111677(A) |
申请公布日期 |
2012.06.14 |
申请号 |
JP20110083404 |
申请日期 |
2011.04.05 |
申请人 |
HITACHI CABLE LTD |
发明人 |
YOSHIDA TAKEHIRO;OSHIMA YUICHI;TSUCHIYA TADAYOSHI |
分类号 |
C30B29/38;C23C16/34;C30B25/02;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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