| 摘要 |
A semiconductor device includes a first semiconductor device and second semiconductor device stacked on the first semiconductor device. The first semiconductor device includes a first interconnect substrate, a first semiconductor element provided on an upper surface of the first interconnect substrate, a first electrode provided on the upper surface of the first interconnect substrate, and an insulating layer having an opening portion through which part of the first electrode is exposed. The second semiconductor device includes a second interconnect substrate, a second semiconductor element provided on an upper surface of the second interconnect substrate, a second electrode provided on a lower surface of the second interconnect substrate, and an inter-device connection terminal connected to the second electrode. Part of the first electrode exposed through the opening portion has a smaller area than an area of the opening portion.
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