发明名称 Methods Of Manufacturing Semiconductor Devices
摘要 Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping layer are formed. A second preliminary insulating interlayer is formed by partially etching the second stopping layer and the first insulating interlayer in the first region. A first polishing is performed to remove a protruding portion. A second polishing is performed to expose the first and second stopping layer patterns.
申请公布号 US2012149185(A1) 申请公布日期 2012.06.14
申请号 US201113313754 申请日期 2011.12.07
申请人 KIM HYO-JUNG;HWANG KI-HYUN;KIM KYUNG-HYUN;CHOI HAN-MEI;YOO DONG-CHUL;PARK CHAN-JIN;LIM JONG-HEUN;PYO MYUNG-JUNG;YOON BYOUNG-MOON;MUN CHANG-SUP;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HYO-JUNG;HWANG KI-HYUN;KIM KYUNG-HYUN;CHOI HAN-MEI;YOO DONG-CHUL;PARK CHAN-JIN;LIM JONG-HEUN;PYO MYUNG-JUNG;YOON BYOUNG-MOON;MUN CHANG-SUP
分类号 H01L21/3205;H01L21/311 主分类号 H01L21/3205
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